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  Datasheet File OCR Text:
 ISSUED DATE :2004/11/10 REVISED DATE :
G9014
Description
N P N E PI TA XI A L T R AN S I S TO R
The G9014 is designed for general purpose amplifier applications.
Package Dimensions
D E S1
TO-92
A
S E A T IN G PLANE
b1
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings at Ta = 25 :
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 50 45 5 100 450 V V V mA mW Unit
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cob
at Ta = 25 :
Min. 50 45 5 0.58 100 150 Typ. 0.14 0.84 0.63 280 270 2.20 Max. 50 50 0.3 1 0.7 1000 3.5 MHz pF Unit V V V nA nA V V V IC=100uA , IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0 IC=100mA, IB=5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCB=10V, f=1MHz, IE=0 Test Conditions
Classification Of hFE
Rank hFE B 100 - 300 C 200-600 D 400-1000
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ISSUED DATE :2004/11/10 REVISED DATE :
Characteristics Curve
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ISSUED DATE :2004/11/10 REVISED DATE :
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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